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霍尔传感器(Hall Effect Sensors)
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HSU-1未封装型霍尔传感器(HSU-1 Unpackaged Hall Effect Sensor)
这是一款构建在陶瓷基板上未封装型霍尔传感器,有效面积为100um×100 um。该类型传感器尺寸很小,适合空间受限场合下磁场测试。
HSU-1未封装型霍尔传感器和示意图
HSP-T横向霍尔传感器(HSP-T Transverse Hall Effect Sensor)
该传感器被横向安装在基板上并灌装环氧树脂固定封装,与其它常见霍尔传感器相比,该款传感器霍尔电压与磁场呈高度线性,且灵敏度与温度关联不大,可在更大磁场范围和更广温度范围下工作。
HSP-T横向霍尔传感器和示意图
HSP-A轴向霍尔传感器(HSP-A Axial Hall Effect Sensor)
该传感器安装在轴向基座上,霍尔电压不小于10mV@Telsa,比之前其它类型的灵敏度提高25%。
HSP-A轴向霍尔传感器和示意图
几种霍尔传感器的性能参数表
| HSU-1 | HSP-T | HSP-A |
Magnetic Field Range | 0 - 33T | 0 - 30T | 0 - 30T |
Temperature Range | 1.5K - 350K | 1.5K - 350K | 1.5K - 350K |
Nominal Current In | 20 mA | 100 mA | 100 mA |
Sensitivity | > 5 mV/T | > 10mV/T | > 10mV/T |
Linearity Error (300K) | < 0.1% (B=0-1T) | < 0.2%(B=0-1T) | < 0.2% (B=0-1T) |
Linearity Error (4.2K) | < 1.0% (B=0-5T) | < 1.0% (B=0-5T) | < 1.0% (B=0-5T) |
Mean Temperature Coefficient of Sensitivity | 2×10-5/K | 2×10-5/K | 2×10-5/K |
Active Sensing Area | 100 um×100 um | 0.625mm2 | 0.05mm2 |
Residual Voltage | < 20uV | < 20uV | ±10uV |
Quantum Oscillations Begin | 2.0K | 2.0K | 2.0K |
Amplitude of Quantum Oscillations | < 0.1% | < 0.1% | < 0.1% |
Input Resistance at 4.2K (zero field) | 1.8 ohms | 1.8 ohms | 1.8 ohms |
Dimensions | 5mm×4mm×0.7mm | 7mm×5mm×1mm | 6mm O.D.×8mm |
备注:这几款Hall传感器都可在低温强磁场下工作,在300K有一个校准点,可选配4.2K@9Tesla校准点。