集电极－发射极电压

Tvj = 25°C

VCES

1200

V

Collector-emitter voltage

连续集电极直流电流

TC = 100°C, Tvj max = 175°C

IC nom

800

A

Continuous DC collector current

集电极重复峰值电流

tP = 1 ms

ICRM

1800

A

Repetitive peak collector current

总功率损耗

TC = 25°C, Tvj max = 175°C

Ptot

5,10

kW

Total power dissipation

栅极－发射极峰值电压

VGES

+/-20

V

Gate-emitter peak voltage

特征值 / Characteristic Values

min.

typ.

max.

集电极－发射极饱和电压

IC = 900 A, VGE = 15 V

Tvj = 25°C

1,70

2,05

V

Collector-emitter saturation voltage

IC = 900 A, VGE = 15 V

Tvj = 125°C

VCE sat

2,00

V

IC = 900 A, VGE = 15 V

Tvj = 150°C

2,10

V

栅极阈值电压

IC = 33,0 mA, VCE = VGE, Tvj = 25°C

VGEth

5,0

5,8

6,5

V

Gate threshold voltage

栅极电荷

VGE = -15 V ... +15 V

QG

6,40

µC

Gate charge

内部栅极电阻

Tvj = 25°C

RGint

1,2

W

Internal gate resistor

输入电容

f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V

Cies

54,0

nF

Input capacitance

反向传输电容

f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V

Cres

2,80

nF

Reverse transfer capacitance

集电极-发射极截止电流

VCE = 1200 V, VGE = 0 V, Tvj = 25°C

ICES

5,0

mA

Collector-emitter cut-off current

栅极-发射极漏电流

VCE = 0 V, VGE = 20 V, Tvj = 25°C

IGES

400

nA

Gate-emitter leakage current

开通延迟时间(电感负载)

IC = 900 A, VCE = 600 V

Tvj = 25°C

td on

0,20

µs

Turn-on delay time, inductive load

VGE = ±15 V

Tvj = 125°C

0,22

µs

RGon = 1,6 W

Tvj = 150°C

0,22

µs

上升时间(电感负载)

IC = 900 A, VCE = 600 V

Tvj = 25°C

tr

0,14

µs

Rise time, inductive load

VGE = ±15 V

Tvj = 125°C

0,15

µs

RGon = 1,6 W

Tvj = 150°C

0,15

µs

关断延迟时间(电感负载)

IC = 900 A, VCE = 600 V

Tvj = 25°C

td off

0,70

µs

Turn-off delay time, inductive load

VGE = ±15 V

Tvj = 125°C

0,80

µs

RGoff = 1,6 W

Tvj = 150°C

0,85

µs

下降时间(电感负载)

IC = 900 A, VCE = 600 V

Tvj = 25°C

tf

0,20

µs

Fall time, inductive load

VGE = ±15 V

Tvj = 125°C

0,40

µs

RGoff = 1,6 W

Tvj = 150°C

0,45

µs

开通损耗能量 (每脉冲)

IC = 900 A, VCE = 600 V, LS = 45 nH

Tvj = 25°C

50,0

mJ

Turn-on energy loss per pulse

VGE = ±15 V, di/dt = 4800 A/µs (Tvj = 150°C) Tvj = 125°C

Eon

70,0

mJ

RGon = 1,6 W

Tvj = 150°C

80,0

mJ

关断损耗能量 (每脉冲）

IC = 900 A, VCE = 600 V, LS = 45 nH

Tvj = 25°C

150

mJ

Turn-off energy loss per pulse

VGE = ±15 V, du/dt = 2700 V/µs (Tvj = 150°C)Tvj = 125°C

Eoff

200

mJ

RGoff = 1,6 W

Tvj = 150°C

205

mJ

短路数据

VGE £ 15 V, VCC = 800 V

ISC

SC data

VCEmax = VCES -LsCE ·di/dt

tP £ 10 µs, Tvj = 150°C

3600

A

结－外壳热阻

每个 IGBT / per IGBT

RthJC

29,5

K/kW

Thermal resistance, junction to case

外壳－散热器热阻

每个 IGBT / per IGBT

RthCH

16,0

K/kW

Thermal resistance, case to heatsink

lPaste = 1 W/(m·K)   /    lgrease = 1 W/(m·K)

在开关状态下温度

Tvj op

-40

150

°C

反向重复峰值电压

Tvj = 25°C

VRRM

1200

V

Repetitive peak reverse voltage

连续正向直流电流

IF

900

A

Continuous DC forward current

正向重复峰值电流

tP = 1 ms

IFRM

1800

A

Repetitive peak forward current

I2t-值

VR = 0 V, tP = 10 ms, Tvj = 125°C

I²t

150

kA²s

I²t - value

VR = 0 V, tP = 10 ms, Tvj = 150°C

145

kA²s

特征值 / Characteristic Values

min.

typ.

max.

正向电压

IF = 900 A, VGE = 0 V

Tvj = 25°C

1,65

2,15

V

Forward voltage

IF = 900 A, VGE = 0 V

Tvj = 125°C

VF

1,55

V

IF = 900 A, VGE = 0 V

Tvj = 150°C

1,50

V

反向恢复峰值电流

IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C)

Tvj = 25°C

560

A

Peak reverse recovery current

VR = 600 V

Tvj = 125°C

IRM

770

A

Tvj = 150°C

820

A

恢复电荷

IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C)

Tvj = 25°C

110

µC

Recovered charge

VR = 600 V

Tvj = 125°C

Qr

200

µC

Tvj = 150°C

225

µC

反向恢复损耗（每脉冲）

IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C)

Tvj = 25°C

50,0

mJ

Reverse recovery energy

VR = 600 V

Tvj = 125°C

Erec

90,0

mJ

Tvj = 150°C

105

mJ

结－外壳热阻

每个二极管 / per diode

RthJC

37,0

K/kW

Thermal resistance, junction to case

外壳－散热器热阻

每个二极管 / per diode

RthCH

20,0

K/kW

Thermal resistance, case to heatsink

lPaste = 1 W/(m·K)   /    lgrease = 1 W/(m·K)

在开关状态下温度

Tvj op

-40

150

°C

Temperature under switching conditions

反向重复峰值电压

Tvj = 25°C

VRRM

1200

V

Repetitive peak reverse voltage

连续正向直流电流

IF

120

A

Continuous DC forward current

正向重复峰值电流

tP = 1 ms

IFRM

240

A

Repetitive peak forward current

I2t-值

VR = 0 V, tP = 10 ms, Tvj = 125°C

I²t

0,17

kA²s

I²t - value