XP162系列P沟道功率MOSFET XP162系列
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代理商厂商性质
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The XP162 is an P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
| 封装 (输出形式) 订货单位 | 品名 | 额定值 | 电特性 | Vgs(OFF)(V) | Ciss(pF) | 驱动电压(V) | ||||||||||
| Vdss(V) | Vdss(V) | ld(A) | Rds(ON)(Ω) | |||||||||||||
| Vgs=-2.5V | Vgs=-4.5V | Vgs=-5.5V | Vgs=-10V | |||||||||||||
| TYP. | MAX. | TYP. | MAX. | TYP. | MAX. | TYP. | MAX. | MIN. | MAX. | |||||||
| SOT-89(Sing le) 1000pcs/Reel | XP162A11C0PR | -30 | ±20 | -2.5 | - | - | 0.28 | 0.45 | 0.075 | 0.11 | 0.11 | 0.15 | -1 | -2.5 | 280 | -4.5 |
| XP162A12A6PR | -20 | ±12 | -2.5 | 0.22 | 0.3 | 0.17 | 0.3 | 0.042 | 0.06 | - | - | -0.5 | -1.2 | 310 | -2.5 | |
Low On-State Resistance : Rds(on) = 0.15Ω@ Vgs = -10V
: Rds(on) = 0.28Ω@ Vgs = -4.5V
Ultra High-Speed Switching
Driving Voltage : -4.5V
Gate Protect Diode Built-in
P-Channel Power MOSFET
DMOS Structure
Small Package : SOT-89
Environmentally Friendly : EU RoHS Compliant, Pb Free
