XP161系列N沟道功率MOSFET XP161系列
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代理商厂商性质
所在地
The XP161A11A1PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.In order to counter static, a gate protect diode is built-in.
| 封装 (输出形式) 订货单位 | 品名 | 额定值 | 电特性 | Vgs(OFF)(V) | Ciss(pF) | 驱动电压(V) | ||||||||||
| Vdss(V) | Vdss(V) | ld(A) | Rds(ON)(Ω) | |||||||||||||
| Vgs=1.5V | Vgs=2.5V | Vgs=4.5V | Vgs=10V | |||||||||||||
| TYP. | MAX. | TYP. | MAX. | TYP. | MAX. | TYP. | MAX. | MIN. | MAX. | |||||||
| SOT-89(Sing le) 1000pcs/Reel | XP161A11A1PR | 30 | ±20 | 4 | - | - | - | 0.45 | 0.075 | 0.11 | 0.05 | 0.065 | 1 | 2.5 | 270 | 4.5 |
| XP161A1265PR | 20 | ±12 | 4 | - | - | 0.07 | 0.3 | 0.042 | 0.06 | - | - | 0.7 | 1.4 | 320 | 2.5 | |
| XP161A1355PR | 30 | ±8 | 4 | 0.1 | 0.15 | 0.05 | 0.14 | 0.037 | 0.05 | - | - | 0.5 | 1.2 | 390 | 1.5 | |
Low On-State Resistance : Rds(on)=0.065Ω@ Vgs=10V
: Rds(on)=0.105Ω@ Vgs=4.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage : 4.5V
N-Channel Power MOSFET
DMOS Structure
Small Package : SOT-89
Environmentally Friendly : EU RoHS Compliant, Pb Free
