The ME4410A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.

ME4410A是采用高密度DMOS沟道技术制作的N通道逻辑增强型功率场效应晶体管。这种高密度工艺特别适合于最小化导通电阻。这些设备特别适用于低电压应用，如蜂窝电话和笔记本电脑电源管理和其他电池供电电路，在非常小的外形表面贴装封装中，需要高侧开关和低压功耗。