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The ME4417 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and other battery powered circuits in a very small outline surface mount package.
ME4417是P通道逻辑增强型功率场效应晶体管,采用高密度DMOS沟道技术制造。这种高密度工艺特别适合于将导通电阻降到。这些器件特别适用于低电压应用,如手机和其他电池供电电路一个非常小的外形表面安装包。
● RDS(ON)≦8.6mΩ@VGS=-20V
● RDS(ON)≦9.6mΩ@VGS=-10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
应用:
●笔记本中的电源管理
●电池供电系统
●DC/DC转换器低压侧开关
●负荷开关