中国台湾松木MOS管 ME10N15数据手册规格书ME10N15中文资料pdf

ME10N15中国台湾松木MOS管 ME10N15数据手册规格书ME10N15中文资料pdf

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2022-03-24 10:31:02
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深圳市泰德兰电子有限公司

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产品简介

TheME10N15istheN-Channellogicenhancementmodepowerfieldeffecttransistors,usinghighcelldensity,DMOStrenchtechnology

详细介绍

  • The ME10N15 is the N-Channel logic enhancement mode power field effect transistors,using high cell density,DMOS trench technology. This high density process is especially tailored to minimize on state resistance.These devices are particularly suited for low voltage application such as cellular phone,notebook computer power management and other battery powered circuits,and low in-line power loss that are needed in a very small outline surface mount package.


    应用:

    ●笔记本中的电源管理


    ●DC/DC转换器


    ●负荷开关


    ●液晶显示逆变器


  • ● RDS(ON)≦345mΩ@VGS=10V

    ● RDS(ON)≦365mΩ@VGS=4.5V

    ● Super high density cell design for extremely low RDS(ON)

    ● Exceptional on-resistance and maximum DC current capability

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