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The ME13N10A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching,and low in-line power loss are needed in a very small outline surface mount package.
应用:
●DC/DC转换器
●负荷开关
●LCD/LED显示逆变器
● RDS(ON) ≦145mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability