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The ME15N25 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application.
ME15N25是一种N通道逻辑增强型功率场效应晶体管，采用高密度DMOS沟道技术制作，这种高密度工艺特别适合于减小导通电阻，特别适合于低压应用。
应用：
●DC/DC转换器
●负荷开关
●LCD/LED显示逆变器
● RDS(ON)≦265mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
