ME3985DS中国台湾松木MOS管 ME3985DS数据手册规格书ME3985DS中文资料pdf
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The ME3985DS is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density ,DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
应用:
●笔记本中的电源管理
●便携式设备
●电池供电系统
●DC/DC转换器
●负荷开关
●差示扫描量热仪
●液晶显示逆变器
● RDS(ON)≦120mΩ@VGS=-4.5V
● RDS(ON)≦160mΩ@VGS=-2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability