中国台湾松木MOS管 MEE3710T数据手册规格书MEE3710T中文资料pdf

MEE3710T中国台湾松木MOS管 MEE3710T数据手册规格书MEE3710T中文资料pdf

参考价: 面议

具体成交价以合同协议为准
2022-03-24 10:57:49
148
产品属性
关闭
深圳市泰德兰电子有限公司

深圳市泰德兰电子有限公司

免费会员
收藏

组合推荐相似产品

产品简介

TheMEE3710TisaN-Channelenhancementmodepowerfieldeffecttransistors,usingForce-MOSpatentedExtendedTrenchGate(ETG)technology

详细介绍

  • The MEE3710T is a N-Channel enhancement mode power field effect transistors,using Force-MOS patented Extended Trench Gate (ETG)technology.This advanced technology is especially tailored to minimize on state resistance and gate charge, and enhance avalanche capability.These devices are particularly suited for medium voltage application such as charger, adapter,notebook computer power management and other lighting dimming powered circuits,and low in-line power loss that are needed in a very small outline surface mount package.


    应用:

    ●电源管理


    ●同步整流


    ●负荷开关


  • ● RDS(ON)≦23mΩ@VGS=10V

    ● Super high density cell design for extremely low RDS(ON)

    ● Exceptional on-resistance and maximum DC current capability

  • 上一篇:高压绕线电机YRKK主要优势特点 下一篇:三相异步电机的应用及作用
    热线电话 在线询价
    提示

    请选择您要拨打的电话:

    温馨提示

    该企业已关闭在线交流功能