The ME50N10AT-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching,ａnd low in-line power loss are needed in a very small outline surface mount package.

应用：

●笔记本中的电源管理

●DC/DC转换器

●负荷开关

●液晶显示逆变器