The ME35N06P is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits,ａnd low in-line power loss that are needed in a very small outline surface mount package.

应用：

●笔记本中的电源管理

●DC/DC转换器

●负荷开关

●液晶显示逆变器