中国台湾松木MOS管 ME50P06P数据手册规格书ME50P06P中文资料pdf

ME50P06P中国台湾松木MOS管 ME50P06P数据手册规格书ME50P06P中文资料pdf

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2022-03-24 11:11:59
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深圳市泰德兰电子有限公司

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产品简介

TheME50P06PistheP-Channellogicenhancementmodepowerfieldeffecttransistorsareproducedusinghighcelldensity,DMOStrenchtechnology

详细介绍

  • The ME50P06P is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits,and low in-line power loss are needed in a very small outline surface mount package.


    应用:

    ●笔记本中的电源管理


    ●DC/DC转换器


    ●负荷开关


    ●液晶显示逆变器


  • ● RDS(ON)≦17mΩ@VGS=-10V

    ● RDS(ON)≦20mΩ@VGS=-4.5V

    ● Super high density cell design for extremely low RDS(ON)

    ● Exceptional on-resistance and maximum DC current capability

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