ME2333-G中国台湾松木MOS管 ME2333-G数据手册规格书ME2333-G中文资料pdf
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The ME2333 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switchingand low in-line power loss are needed in a very small outline surface mount package.
ME2333是P通道逻辑增强型功率场效应晶体管,采用高密度DMOS沟道技术制造。这种高密度工艺特别适合于最小化导通电阻。这些设备特别适用于低电压应用,如蜂窝电话和笔记本电脑电源管理和其他电池供电电路,在非常小的外形表面安装包中,需要高侧切换和低在线功耗。
应用:
●笔记本中的电源管理
●便携式设备
●电池供电系统
●DC/DC转换器
●负荷开关
●差示扫描量热仪
●液晶显示逆变器
●RDS(开)≤35mΩ@VGS=-4.5V
●RDS(开)≤49mΩ@VGS=-2.5V
●RDS(开)≤69mΩ@VGS=-1.8V
●超高密度电池设计,适用于极低RDS(开)
●异常导通电阻和直流电流