ME7202中国台湾松木MOS管 ME7202数据手册规格书ME7202中文资料pdf
品牌
代理商厂商性质
所在地
The ME7202 is the dual N-Channel + P-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching,ａnd low in-line power loss are needed in a very small outline surface mount package.
应用：
●笔记本中的电源管理
●便携式设备
●电池供电系统
●DC/DC转换器
●负荷开关
●液晶显示逆变器
● RDS(ON) ≦ 31 mΩ@VGS=4.5V (N-Ch)
● RDS(ON) ≦ 43 mΩ@VGS=2.5V(N-Ch)
● RDS(ON) ≦ 74 mΩ@VGS=1.8V(N-Ch)
● RDS(ON) ≦ 73mΩ@VGS=-4.5V(P-Ch)
● RDS(ON) ≦ 120 mΩ@VGS=-2.5V(P-Ch)
● RDS(ON) ≦ 240 mΩ@VGS=-1.8V(P-Ch)
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
