ME5937ED中国台湾松木MOS管 ME5937ED数据手册规格书ME5937ED中文资料pdf
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The ME5937ED is the Fual P-Channel logic enhancement mode power field effect transistors,using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone,notebook computer power management and other battery powered circuits,and lower power loss that are needed in a very small outline surface mount package.
应用:
●笔记本中的电源管理
●便携式设备
●电池供电系统
●DC/DC转换器
●负荷开关
●差示扫描量热仪
● RDS(ON)≦62mΩ@VGS=-4.5V
● RDS(ON)≦77mΩ@VGS=-2.5V
● RDS(ON)≦110mΩ@VGS=-1.8V
● RDS(ON)≦180mΩ@VGS=-1.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability