MEE7816S中国台湾松木MOS管 MEE7816S数据手册规格书MEE7816S中文资料pdf
品牌
代理商厂商性质
所在地
The MEE7816S is a N-Channel enhancement mode power field effect transistors,using Force-MOS patented Extended Trench Gate(ETG) technology.This advanced technology is especially tailored to minimize on state resistance and gate charge,ａnd enhance avalanche capability.These devices are particularly suited for medium voltage application such as charger,adapter,notebook computer power management and other lighting dimming powered circuits,ａnd low in-line power loss that are needed in a very small outline surface mount package.
应用：
●电源管理
●同步整流
●负荷开关
● RDS(ON)≦100mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
