ME7900ED中国台湾松木MOS管 ME7900ED数据手册规格书ME7900ED中文资料pdf
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The ME7900ED is the dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where gigh-side switching,and low in-line power loss are needed in a veryh small outline surface mount package.
应用:
●笔记本中的电源管理
●电池供电系统
●DC/DC转换器低压侧开关
●负荷开关
● RDS(ON)≦22mΩ@VGS=4.5V
● RDS(ON)≦23mΩ@VGS=4V
● RDS(ON)≦25mΩ@VGS=3.1V
● RDS(ON)≦30mΩ@VGS=2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability