ME2N7002DKW中国台湾松木MOS管 ME2N7002DKW数据手册规格书ME2N7002DKW中文资料pdf
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The ME2N7002DKW is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is tespecially tailored tespecially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits,and low in-line power loss are needed in a very small outline surface mount package.
应用:
●笔记本中的电源管理
●DC/DC转换器
●负荷开关
●液晶显示逆变器
● RDS(ON)≦3Ω@VGS=10V
● RDS(ON)≦4Ω@VGS=4.5V
● RDS(ON)≦4.5Ω@VGS=3V
● ESD Protection HBM >2KV
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability