ME2N7002F1KW中国台湾松木MOS管 ME2N7002F1KW数据手册规格书ME2N7002F1KW中文资料pdf
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代理商厂商性质
所在地
The ME2N7002F1KW is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
应用：
●笔记本中的电源管理
●DC/DC转换器
●负荷开关
●液晶显示逆变器
● RDS(ON)≦8Ω@VGS=4V
● RDS(ON)≦13Ω@VGS=2.5V
● ESD Protection HBM 1KV
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
