ME20P03F中国台湾松木MOS管 ME20P03F数据手册规格书ME20P03F中文资料pdf
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The ME20P03F is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application.
应用:
●笔记本中的电源管理
●DC/DC转换器
●负荷开关
●液晶显示逆变器
● RDS(ON)≦31.5mΩ@VGS=-10V
● RDS(ON)≦44mΩ@VGS=-4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability