ME25N10F中国台湾松木MOS管 ME25N10F数据手册规格书ME25N10F中文资料pdf
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The ME25N10F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.
应用：
●笔记本中的电源管理
●DC/DC转换器
●负荷开关
●液晶显示逆变器
● RDS(ON)≦85mΩ@VGS=10V
● RDS(ON)≦105mΩ@VGS=5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
