The ME3205F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone,notebook computer power management and other battery powered circuits,ａnd low in-line power loss that are needed in a very small outline surface mount package.

应用：

●电源管理

●DC/DC转换器