中国台湾松木MOS管 ME7114AS数据手册规格书ME7114AS中文资料pdf

ME7114AS中国台湾松木MOS管 ME7114AS数据手册规格书ME7114AS中文资料pdf

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2022-03-25 10:30:10
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深圳市泰德兰电子有限公司

深圳市泰德兰电子有限公司

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产品简介

TheME7114ASistheN-Channellogicenhancementmodepowerfieldeffecttransistorsareproducedusinghighcelldensity,DMOStrenchtechnology

详细介绍

  • The ME7114AS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where Low-side switching,and low in-line power loss are needed in a very small outline surface mount package.


    应用:

    ●便携式设备


    ●电池供电系统


    ●DC/DC转换器


    ●负荷开关


  • ● RDS(ON)≦7mΩ@VGS=10V

    ● RDS(ON)≦10.5mΩ@VGS=4.5V

    ● Super high density cell design for extremely low RDS(ON)

    ● Exceptional on-resistance and maximum DC current capability

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