ME7114S中国台湾松木MOS管 ME7114S数据手册规格书ME7114S中文资料pdf
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The ME7114S is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where Low-side switching,and low in-line power loss are needed in a very small outline surface mount package.
应用:
●便携式设备
●电池供电系统
●DC/DC转换器
●负荷开关
● RDS(ON)≦7mΩ@VGS=10V
● RDS(ON)≦10.5mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability