ME7804S中国台湾松木MOS管 ME7804S数据手册规格书ME7804S中文资料pdf
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The ME7804 N-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching,and low in-line power loss are needed in a very small outline surface mount package.
应用:
●笔记本中的电源管理
●便携式设备
●电池供电系统
●负荷开关
●差示扫描量热仪
●ESD保护
● RDS(ON) ≦16mΩ@VGS=10V
● RDS(ON) ≦25mΩ@ VGS=4.5V